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	<title>GaNPower</title>
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	<description>GaNPower International</description>
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	<url>https://iganpower.com/wp-content/uploads/2016/02/cropped-logo-1-32x32.jpg</url>
	<title>GaNPower</title>
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<site xmlns="com-wordpress:feed-additions:1">136096265</site>	<item>
		<title>GaNPower Breakthrough in 1200V GaNFET Dynamic Ron</title>
		<link>https://iganpower.com/ganpower-breakthrough-in-1200v-ganfet-dynamic-ron</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Tue, 04 Jun 2024 23:54:22 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5303</guid>

					<description><![CDATA[1200V GaNFET GaNPower recently demonstrates good dynamic switching performance for a wide temperature range and voltage range 25-125C, from Vbus=100-1200V, at...]]></description>
										<content:encoded><![CDATA[
<p>1200V GaNFET GaNPower recently demonstrates good dynamic switching performance for a wide temperature range and voltage range 25-125C, from Vbus=100-1200V, at a switching current of 20A. Details are <a href="https://iganpower.com/wp-content/uploads/2024/06/GaNPower_3G1200V_news_Jun24.pdf">here</a>.</p>



<p><strong><em>About GanPower International Inc.</em></strong></p>



<p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.<a href="https://iganpower.com/ganpower-releases-to247-4-based-high-current-power-switches#"></a></p>



<p></p>
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		<post-id xmlns="com-wordpress:feed-additions:1">5303</post-id>	</item>
		<item>
		<title>GaNPower releases TO247-4 based high current power switches</title>
		<link>https://iganpower.com/ganpower-releases-to247-4-based-high-current-power-switches</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Fri, 05 Jan 2024 01:23:26 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5256</guid>

					<description><![CDATA[We at GaNPower are pleased to announce the release of a new class of engineering samples of high voltage (nominal 650V...]]></description>
										<content:encoded><![CDATA[
<p>We at GaNPower are pleased to announce the release of a new class of engineering samples of high voltage (nominal 650V and 1200V) GaN power switches based on the TO247-4 package. Up to a maximum rated current of 120A (12 mOhm), some of these switches include driver IC intended to be driven by digital signal while others include a monolithically integrated input regulator circuit*. The ones with regulator are regarded as an upgraded discrete GaNFET such that their lead arrangement, input gate threshold voltage (Vgth=2.7V) and gate voltage driving range (Vg=-20V to 20V) match existing SiC MOSFET**. Such power switches are called P2P-GaN devices so that it can match existing SiC MOSFET in a pin to pin (P2P) fashion. Our initial double pulse test indicate that such 1200V TO247-4 devices can switch cleanly at half of its rated maximum current up to bus voltage of 1000V at up to 500kHz, making them suitable for application with bus voltage between 800-1000V. Potential customers are encouraged to contact us for engineering samples and app notes.</p>



<p><em><strong> </strong></em>* The P2P regulator circuit is patent pending.<br>** Although safe to drive Vg from -20 to 20V, the current version of P2P-GaN generates some heat loss when Vg is high. Best to limit the Vg to be below 10V if possible.</p>



<p><strong><em>About GanPower International Inc.</em></strong></p>



<p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>
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		<post-id xmlns="com-wordpress:feed-additions:1">5256</post-id>	</item>
		<item>
		<title>IRAP has approved funding support for Ganpower&#8217;s project</title>
		<link>https://iganpower.com/irap-has-approved-funding-support-for-ganpowers-project</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Tue, 05 Dec 2023 18:50:11 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5230</guid>

					<description><![CDATA[We are pleased to announce that Ganpower International Inc.’s proposal for the IRAP project titled “GSense Lossless in-line current sensing for...]]></description>
										<content:encoded><![CDATA[
<p>We are pleased to announce that Ganpower International Inc.’s proposal for the IRAP project titled “GSense Lossless in-line current sensing for all-GaN-IC Intelligent Power Modules” has been approved for support under the National Research Council Canada’s Industrial Research Assistance Program (NRC IRAP).</p>



<p><strong><em>About GanPower International Inc.</em></strong></p>



<p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>
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		<post-id xmlns="com-wordpress:feed-additions:1">5230</post-id>	</item>
		<item>
		<title>GaNPower GaNFETs are being used for Samsung smartphones quick chargers</title>
		<link>https://iganpower.com/ganpower-ganfets-are-being-used-for-samsung-smartphones</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Thu, 23 Nov 2023 05:36:15 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5188</guid>

					<description><![CDATA[GaNPower is pleased to inform that after rigorous qualification procedures its GaNFETs are being used in various types of PD quick...]]></description>
										<content:encoded><![CDATA[
<p>GaNPower is pleased to inform that after rigorous qualification procedures its GaNFETs are being used in various types of PD quick chargers for Samsung smartphones.</p>



<p><strong><em>About GanPower International Inc.</em></strong></p>



<p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>
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		<post-id xmlns="com-wordpress:feed-additions:1">5188</post-id>	</item>
		<item>
		<title>GaNPower Releases GaN Power Switch With Current Sensing</title>
		<link>https://iganpower.com/ganpower-releases-gan-power-switch-with-current-sensing</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Wed, 18 Oct 2023 14:18:23 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5124</guid>

					<description><![CDATA[GaNPower is pleased to release GaN power switch with an integrated lossless current sensing element. With unique all-GaN-IC based current sensing...]]></description>
										<content:encoded><![CDATA[
<p>GaNPower is pleased to release GaN power switch with an integrated lossless current sensing element. With unique all-GaN-IC based current sensing technology, both positive and negative current sensing can be achieved. The device may be regarded as a discrete FET with integrated sensing circuit, or be regarded as belonging to the family of GaN-IC with monolithic subcircuit integration. The power switch is packaged in DFN8x8 with a maximum current rating of 60A at 650V. Typical Rdson is rated at 25mOhm. Details can be found here at <a href="https://iganpower.com/wp-content/uploads/2023/10/GPI65060DFC_v1.0-2.pdf" data-type="link" data-id="https://iganpower.com/ganhemts">GPI65060DFC</a>.</p>



<p><strong><em>About GanPower International Inc.</em></strong></p>



<p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>



<p></p>
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		<post-id xmlns="com-wordpress:feed-additions:1">5124</post-id>	</item>
		<item>
		<title>hiside GaN-IC restocked</title>
		<link>https://iganpower.com/new-hi-side-gan_ic</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Fri, 24 Mar 2023 23:35:26 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=4942</guid>

					<description><![CDATA[GaNPower is pleased to inform that after disruption for a period of three years due to fab capacity issues, we are...]]></description>
										<content:encoded><![CDATA[
<p>GaNPower is pleased to inform that after disruption for a period of three years due to fab capacity issues, we are able to restock <a href="https://iganpower.com/ganhemts" target="_blank" rel="noreferrer noopener">the hiside GaN-IC</a>. Our hiside IC used edge trigger method and a pair of signal transformers to offer easy level shifting when using monolithic GaN-IC.</p>



<p><strong><em>About GanPower International Inc.</em></strong></p>



<p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>
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		<post-id xmlns="com-wordpress:feed-additions:1">4942</post-id>	</item>
		<item>
		<title>New 5kW 3-phase inverter power stage</title>
		<link>https://iganpower.com/new-5kw-3-phase-inverter-power-stage</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Mon, 20 Mar 2023 05:07:11 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=4934</guid>

					<description><![CDATA[GaNPower is pleased to announce the availability of a new evaluation board of 5kW 3-phase inverter power stage. The inverter will...]]></description>
										<content:encoded><![CDATA[
<p>GaNPower is pleased to announce the availability of a new evaluation board of <a href="https://iganpower.com/wp-content/uploads/2023/03/bab_result.3.pptx" data-type="URL" data-id="https://iganpower.com/wp-content/uploads/2023/03/bab_result.pptx" target="_blank" rel="noreferrer noopener">5kW 3-phase inverter power stage</a>. The inverter will be showcased at <a rel="noreferrer noopener" href="https://apec-conf.org/" data-type="URL" data-id="https://apec-conf.org/" target="_blank">2023 APEC in Orlando</a>. Please come visit us at APEC exhibition.</p>



<p></p>



<p></p>
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		<post-id xmlns="com-wordpress:feed-additions:1">4934</post-id>	</item>
		<item>
		<title>Release of new GaNPowerIC: GPIRG15DFV</title>
		<link>https://iganpower.com/release-of-new-ganpoweric-gpirg15dfv</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Wed, 21 Dec 2022 17:24:57 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=4806</guid>

					<description><![CDATA[GaNPower International (GPI) is pleased to announce the release of a new GaNPowerIC: GPIRG15DFV. Rated at 85mOhm/900V, this all-GaN IC is...]]></description>
										<content:encoded><![CDATA[
<p>GaNPower International (GPI) is pleased to announce the release of a new <a href="https://iganpower.com/ganhemts">GaNPowerIC: GPIRG15DFV</a>. Rated at 85mOhm/900V, this all-GaN IC is suitable for 400V or 600V DC bus power switching.<br>This power IC monolithically integrates a fast GaN based driver with an easy-to-use regulated PWM input and auxiliary power supply. Common Emode GaNFET or IC is known to have the disadvantage of small gate voltage (6-7V) which makes it incompatible with silicon based drivers and controllers.<br>GPI patented technology allows an internal regulator to accept larger PWM input (10-15V) and wider auxiliary power supply range (8-30V).</p>



<p><strong><em>About GanPower International Inc.</em></strong></p>



<p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>
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		<post-id xmlns="com-wordpress:feed-additions:1">4806</post-id>	</item>
		<item>
		<title>New 900V GaN-IC devices</title>
		<link>https://iganpower.com/new-900v-gan-ic-devices</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Tue, 15 Nov 2022 22:47:40 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=4769</guid>

					<description><![CDATA[GaNPower International is pleased to announce the release of two kinds of engineering GaN-IC at 900V and Rdson 85mOhm. They are...]]></description>
										<content:encoded><![CDATA[
<p>GaNPower International is pleased to announce the release of two kinds of engineering GaN-IC at 900V and Rdson 85mOhm. They are suitable for DC bus ranging from 400-600V power switching operation.<br>They offer lower dynamic Rdson than discrete GaNFET and untra-low quiescent leakage current. The IC markings are GPI4TIC15DFV and GPI6TIC15DFV. Details can be found in the <a rel="noreferrer noopener" href="https://iganpower.com/ganhemts" data-type="URL" data-id="https://iganpower.com/ganhemts" target="_blank">product page</a>.</p>



<p><strong><em>About GanPower International Inc.</em></strong></p>



<p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>
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		<post-id xmlns="com-wordpress:feed-additions:1">4769</post-id>	</item>
		<item>
		<title>GaNPower Attending IEEE Energy Conversion Congress</title>
		<link>https://iganpower.com/ganpower-attending-ieee-energy-conversion-congress</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Tue, 04 Oct 2022 19:54:21 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=4726</guid>

					<description><![CDATA[Join the GaNPower experts in power electronics for the industrial markets at the in-person IEEE Energy Conversion Congress &#38; Expo Huntington...]]></description>
										<content:encoded><![CDATA[
<p>Join the GaNPower experts in power electronics for the industrial markets at the in-person <a href="https://www.ieee-ecce.org/2022/" target="_blank" rel="noreferrer noopener">IEEE Energy Conversion Congress &amp; Expo</a> Huntington Place, Detroit, MI Oct 9-13, 2022 at booth #402.&nbsp; </p>



<p>Subject matter experts will be presenting in Special Session 17 Room 142A/B at the conference, and our team will be available to discuss and demonstrate cutting edge technologies.</p>



<p><strong>Title</strong>: Monolithic integration of&nbsp;highside&nbsp;driver with&nbsp;GaN&nbsp;power switches</p>



<p><strong>Contributors</strong>: Simon Li(*), Zeyu Wan and Oliver Hip</p>
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		<post-id xmlns="com-wordpress:feed-additions:1">4726</post-id>	</item>
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